Research Engineer/Senior Research Engineer(Ion-implantation and Rapid Thermal.,) - Toa Payoh

Research Engineer / Senior Research Engineer (Ion-implantation and Rapid Thermal Anneal Module) (NSTIC), IME

Job Description:

• Responsible for developing and optimizing ion-implantation and rapid thermal anneal (RTA) processes to support IME's various program requirements.
• Responsibilities include diagnosing malfunctions and using test equipment or software to test faulty hardware parts, applying knowledge of the functional operation of the Ion implanter and RTA equipment.
• Collaborates closely with vendors to optimize equipment performance and reduce tool downtime.
• Setup and execute design of experiments (DOEs) at various dose, energy, tilt, and twist levels, and evaluate experimental data to meet required process specifications.
• Responsible for analyzing test data related to implant-related defect formation, and quantifying and minimizing defects.
• Champion process window characterization and evaluation to drive quality and yield improvement.
• Closely collaborate with process integration teams to implement technology roadmaps, define process capability requirements, and address structural implications and constraints related to ion-implantation and RTA processes.
• Work with fab team in establishing statistical process control for ion-implantation and RTA processes.
• Generate and present reports to both internal and external customers.

Requirements:

• Bachelors/Masters in Materials Science and Engineering, Physics, Electrical Engineering, or closely related fields are welcome to apply.
• 3 years direct industry experience in ion-implantation, RTA and SiC MOSFET fabrication is preferred.
• Extensive proficiency in medium and high energy/current ion implantation, and RTA processes, including a comprehensive knowledge of equipment, equipment parts, and troubleshooting techniques to minimize equipment downtime.
• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species.
• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile.
• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors.
• Familiarity with essential device properties resulting from ion implantation and RTA processes.
• Understanding of the hardware of ion-implantation and RTA systems is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.